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[IEEE 6th International Conference on Solid-State and IC Technology - Shanghai, China (22-25 Oct. 2001)] 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) - Charging damage in dual gate oxide process

✍ Scribed by Jin, Y.; Lim, H.F.; Tong, A.F.; Gn, F.H.; Low, A.S.; Teo, W.Y.; Hou, Y.T.; Li, M.F.

Book ID: 126706643
Publisher: IEEE
Year: 2001
Weight: 277 KB
Volume: 2
Category: Article
ISBN-13: 9780780365209
DOI: 10.1109/ICSICT.2001.982057

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