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[IEEE 6th International Conference on Solid-State and IC Technology - Shanghai, China (22-25 Oct. 2001)] 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) - Schottky barrier height inhomogeneities of nickel mono-silicide/n-Si contact studied by I-V-T technique

✍ Scribed by Yu-Long Jiang, ; Yun Tian, ; Guo-Ping Ru, ; Yong-Zhao Han, ; Fang Lu, ; Bing-Zong Li,

Book ID: 120186565
Publisher: IEEE
Year: 2001
Weight: 259 KB
Volume: 1
Category: Article
ISBN-13: 9780780365209
DOI: 10.1109/ICSICT.2001.981528

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