[IEEE 58th ARFTG Conference Digest - San Diego, CA, USA (2001.11.29-2001.11.30)] 58th ARFTG Conference Digest - A New Empirical Gate Capacitance Model for PHEMT and MESFET Transistors

✍ Scribed by Loo-Yau, J.R.; Infante-Galindo, R.; Reynoso-Hernandez, J.A.

• Book ID: 125459298
• Publisher: IEEE
• Year: 2001
• Tongue: English
• Weight: 64 KB
• Category: Article
• ISBN-13: 9780780356863
• DOI: 10.1109/arftg.2001.327490