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[IEEE 53rd Electronic Components and Technology Conference, 2003. - New Orleans, Louisiana, USA (May 27-30, 2003)] 53rd Electronic Components and Technology Conference, 2003. Proceedings. - Thermal modeling and measurement of AlGaN/GaN FETs built on sapphire and SiC substrates

✍ Scribed by Jeong Park, ; Kakovitch, D.; Moo whan Shin, ; Chin C. Lee,

Book ID: 111877785
Publisher: IEEE
Year: 2003
Weight: 546 KB
Volume: 0
Category: Article
ISBN-13: 9780780377912
DOI: 10.1109/ectc.2003.1216314

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