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[IEEE 4th International Symposium on Power Semiconductor Devices and Ics - Tokyo, Japan (May 19-21, 1992)] Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics - Comparison of DI and JI lateral IGBTs

โœ Scribed by Huang, Y.S.; Baliga, B.J.; Tandon, S.; Reisman, A.


Book ID
127197102
Publisher
IEEE
Year
1992
Weight
326 KB
Category
Article

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