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[IEEE 4th International Symposium on Power Semiconductor Devices and Ics - Tokyo, Japan (May 19-21, 1992)] Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics - Failure in GTO circuits due to the change in recovery characteristic of snubber diodes

✍ Scribed by Hoban, P.T.; Carreira, M.; Shammas, N.Y.A.

Book ID: 126685816
Publisher: IEEE
Year: 1992
Weight: 101 KB
Category: Article
DOI: 10.1109/ISPSD.1992.991281

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