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[IEEE 3rd International Symposium on Power Semiconductor Devices and ICs - Baltimore, MD, USA (22-24 April 1991)] [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs - Analysis of silicon carbide power device performance

✍ Scribed by Bhatnagar, M.; Baliga, B.J.

Book ID: 120964405
Publisher: IEEE
Year: 1991
Tongue: English
Weight: 489 KB
Category: Article
ISBN-13: 9780780300095
DOI: 10.1109/ISPSD.1991.146093

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