[IEEE 3rd International Symposium on Power Semiconductor Devices and ICs - Baltimore, MD, USA (22-24 April 1991)] [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs - Realization of high breakdown voltage (<700 V) in thin SOI devices

[IEEE 3rd International Symposium on Pow

✍ Bhatnagar, M.; Baliga, B.J. 📂 Article 📅 1991 🏛 IEEE 🌐 English ⚖ 489 KB

[IEEE 3rd International Symposium on Pow

✍ Shekar, M.S.; Baliga, B.J.; Nandakumar, M.; Tandon, S.; Reisman, A. 📂 Article 📅 1991 🏛 IEEE 🌐 English ⚖ 326 KB

[IEEE 3rd International Symposium on Pow

✍ Shen, Z.; Chow, T.P. 📂 Article 📅 1991 🏛 IEEE 🌐 English ⚖ 319 KB

[IEEE 3rd International Symposium on Pow

✍ Miyazaki, H.; Sakurai, N.; Onda, K.; Tanaka, T.; Mori, M.; Wada, M.; Matsuzaki, 📂 Article 📅 1991 🏛 IEEE 🌐 English ⚖ 418 KB

[IEEE 3rd International Symposium on Pow

✍ Mori, M.; Yasuda, Y.; Sakurai, N.; Sugawara, Y. 📂 Article 📅 1991 🏛 IEEE 🌐 English ⚖ 387 KB

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[IEEE 3rd International Symposium on Power Semiconductor Devices and ICs - Baltimore, MD, USA (22-24 April 1991)] [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs - Realization of high breakdown voltage (&lt;700 V) in thin SOI devices