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[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - Sensitivity analysis of a technique for the extraction of interface trap density in SiC MOSFETs from subthreshold characteristics

โœ Scribed by Hughart, D. R.; Flicker, J. D.; Atcitty, S.; Marinella, M. J.; Kaplar, R. J.


Book ID
126614398
Publisher
IEEE
Year
2014
Weight
599 KB
Category
Article
ISBN
1479933171

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