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[IEEE 2013 International Conference on Advances in Electrical Engineering (ICAEE) - Dkaka, Bangladesh (2013.12.19-2013.12.21)] 2013 2nd International Conference on Advances in Electrical Engineering (ICAEE) - Gate leakage in hafnium oxide high-k metal gate nMOSFETs

✍ Scribed by Rao, Ashutosh; Mukhopadhyay, Gautam

Book ID: 121849337
Publisher: IEEE
Year: 2013
Weight: 523 KB
Category: Article
ISBN: 1479924644
DOI: 10.1109/ICAEE.2013.6750369

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