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[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives

✍ Scribed by Rideau, D.; Niquet, Y. M.; Nier, O.; Cros, A.; Manceau, J. P.; Palestri, P.; Esseni, D.; Nguyen, V. H.; Triozon, F.; Barbe, J. C.; Duchemin, I.; Garetto, D.; Smith, L.; Silvestri, L.; Nallet, F.; Clerc, R.; Weber, O.; Andrieu, F.; Josse, E.; Tavernier, C.; Jaouen, H.

Book ID: 126063028
Publisher: IEEE
Year: 2013
Weight: 345 KB
Category: Article
ISBN: 1479923060
DOI: 10.1109/IEDM.2013.6724617

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