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[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Approach to the silicon limit: Advanced NLDMOS in 0.13 μm SOI technology for automotive and industrial applications up to 110V

✍ Scribed by Hongning Yang, ; Jiangkai Zuo, ; Zhihong Zhang, ; Wongi Min, ; Xin Lin, ; Xu Cheng, ; Muh-Ling Ger, ; Hui, Paul; Rodriquez, Pete

Book ID: 125423147
Publisher: IEEE
Year: 2013
Weight: 873 KB
Category: Article
ISBN: 1467351369
DOI: 10.1109/ispsd.2013.6694421

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