[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - A novel super-junction trench gate MOSFET fabricated using high aspect-ratio trench etching and boron lateral diffusion technologies

✍ Scribed by Kim, S. G.; Park, H. S.; Yoo, S. W.; Na, K. I.; Koo, J. G.; Won, J. I.; Park, K. S.; Yang, Y. S.; Lee, J. H.

• Book ID: 124102648
• Publisher: IEEE
• Year: 2013
• Weight: 916 KB
• Category: Article
• ISBN: 1467351369
• DOI: 10.1109/ISPSD.2013.6694459