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[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Breakthrough in trade-off between threshold voltage and specific on-resistance of SiC-MOSFETs

✍ Scribed by Furuhashi, Masayuki; Tanioka, Toshikazu; Ebiike, Yuji; Suekawa, Eisuke; Tarui, Yoichiro; Sakai, Shinji; Yutani, Naoki; Miura, Naruhisa; Imaizumi, Masayuki; Yamakawa, Satoshi; Oomori, Tatsuo

Book ID: 124094364
Publisher: IEEE
Year: 2013
Weight: 776 KB
Category: Article
ISBN: 1467351369
DOI: 10.1109/ISPSD.2013.6694397

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