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[IEEE 2012 International Conference on Optoelectronics and Microelectronics (ICOM) - Changchun, Jilin, China (2012.08.23-2012.08.25)] 2012 International Conference on Optoelectronics and Microelectronics - Simulation study of single event effect for different N-well and Deep-N-well doping in 65nm triple-well CMOS devices

✍ Scribed by Wang, Tianqi; Xiao, Liyi; Huang, Qingfeng

Book ID: 118032663
Publisher: IEEE
Year: 2012
Weight: 785 KB
Category: Article
ISBN: 1467326372
DOI: 10.1109/icoom.2012.6316326

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