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[IEEE 2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO) - Xi'an, China (2012.08.29-2012.09.1)] 2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO) - Characterizing leakage current in silicon nanowire-based field-effect transistors by applying pseudo-random sequences

✍ Scribed by Roinila, Tomi; Yu, Xiao; Gao, Anran; Li, Tie; Verho, Jarmo; Vilkko, Matti; Kallio, Pasi; Wang, Yuelin; Lekkala, Jukka

Book ID: 120296623
Publisher: IEEE
Year: 2012
Weight: 151 KB
Category: Article
ISBN: 146734589X
DOI: 10.1109/3M-NANO.2012.6472995

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