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[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Early stage degradation of InAlN/GaN HEMTs during electrical stress

✍ Scribed by Tapajna, M.; Gregusova, D.; Cico, K.; Fedor, J.; Carlin, J.-F.; Grandjean, N.; Killat, N.; Kuball, M.; Kuzmik, J.

Book ID: 126761457
Publisher: IEEE
Year: 2012
Weight: 145 KB
Category: Article
ISBN: 1467311960
DOI: 10.1109/ASDAM.2012.6418567

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