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[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Electrical characterization of the InAlN/GaN heterostructures by capacitance methods

✍ Scribed by Stuchlikova, L.; Petrus, M.; Kovac, J.; Rybar, J.; Harmatha, L.; Donoval, D.; Benkovska, J.; Behmenburg, H.; Heuken, M.

Book ID: 121721022
Publisher: IEEE
Year: 2012
Weight: 186 KB
Category: Article
ISBN: 1467311960
DOI: 10.1109/asdam.2012.6418557

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