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[IEEE 2012 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Bangkok, Thailand (2012.12.3-2012.12.5)] 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC) - Design of multi-octave band GaN-HEMT power amplifier

✍ Scribed by Eren, Gulesin; Sen, Ozlem A.; Bolukbas, Basar; Kurt, Gokhan; Arican, Orkun; Cengiz, Omer; Unal, Sila T.K.; Durmus, Yildirim; Ozbay, Ekmel

Book ID: 124169664
Publisher: IEEE
Year: 2012
Weight: 994 KB
Category: Article
ISBN: 1467356956
DOI: 10.1109/EDSSC.2012.6482767

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