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[IEEE 2012 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Bangkok, Thailand (2012.12.3-2012.12.5)] 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC) - Process-induced charge trapping and junction breakdown instability in deep trench isolation for high voltage Smart Power IC process

✍ Scribed by Hee-dae Kim, ; Ju-won Park, ; Choul-Joo Ko, ; Bon-Keun Jun, ; Namchil Moon, ; KyungWook Kwon, ; Changjun Lee, ; Kunsik Sung, ; Nam-Joo Kim, ; Kwang-Dong Yoo, ; Yoon-Jong Lee,

Book ID: 120226355
Publisher: IEEE
Year: 2012
Weight: 323 KB
Category: Article
ISBN: 1467356956
DOI: 10.1109/EDSSC.2012.6482808

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