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[IEEE 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Xian, China (2012.10.29-2012.11.1)] 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology - The evolution of the HfSiOx/Si interface along with the increase of forming gas annealing temperature

✍ Scribed by Yang, Wen; Geng, Yang; Fang, Run-chen; Sun, Qing-Qing; Lu, Hong-liang; Zhou, Peng; Zhang, David Wei

Book ID: 120091069
Publisher: IEEE
Year: 2012
Weight: 522 KB
Category: Article
ISBN: 1467324736
DOI: 10.1109/ICSICT.2012.6467832

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