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[IEEE 2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD) - Melbourne, Australia (2012.12.12-2012.12.14)] COMMAD 2012 - The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

✍ Scribed by Carrad, D.; Burke, A.M.; Waddington, D.; Lyttleton, R.; Tan, H.H.; Reece, P.J.; Klochan, O.; Hamilton, A.R.; Rai, A.; Reuter, D.; Wieck, A.D.; Micolich, A.P.

Book ID: 126748077
Publisher: IEEE
Year: 2012
Weight: 485 KB
Category: Article
ISBN: 1467330477
DOI: 10.1109/COMMAD.2012.6472334

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