[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - 0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs

✍ Scribed by Chou, Hsueh-Liang; Su, P. C.; Ng, J. C. W.; Wang, P. L.; Lu, H. T.; Lee, C. J.; Syue, W. J.; Yang, S. Y.; Tseng, Y. C.; Cheng, C. C.; Yao, C. W.; Liou, R. S.; Jong, Y. C.; Tsai, J. L.; Cai, Jun; Tuan, H. C.; Huang, Chih-Fang; Gong, Jeng

• Book ID: 125474331
• Publisher: IEEE
• Year: 2012
• Weight: 800 KB
• Category: Article
• ISBN: 1457715961
• DOI: 10.1109/ispsd.2012.6229106