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[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Linear drain current degradations of FG-pLEDMOS transistor under different AC stress conditions

✍ Scribed by Qian, Qinsong; Sun, Weifeng; Liu, Siyang; Shi, Longxing; Su, Wei; Xu, Zhengxin; Ma, Shulang

Book ID: 125447997
Publisher: IEEE
Year: 2012
Weight: 633 KB
Category: Article
ISBN: 1457715961
DOI: 10.1109/ispsd.2012.6229083

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