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[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Experimental analysis of DC and noise parameter degradation in n-channel reduced surface field (RESURF) LDMOS transistors

✍ Scribed by Mahmud, M. Iqbal; Celik-Butler, Zeynep; Cheng, Xu; Huang, Weixiao; Hao, Pinghai; Srinivasan, Purushothaman; Hou, Frank; Amey, Benjamin L.; Pendharkar, Sameer

Book ID: 125442307
Publisher: IEEE
Year: 2012
Weight: 889 KB
Category: Article
ISBN: 1457715961
DOI: 10.1109/ispsd.2012.6229085

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