[IEEE 2012 12th Annual Non-Volatile Memory Technology Symposium (NVMTS) - Singapore, Singapore (2012.10.31-2012.11.2)] 2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings - Conduction investigation in oxide-based resistive random access memory with low frequency noise analysis

✍ Scribed by Fang, Z.; Wang, X. P.; Lo, G. Q.; Kwong, D. L.

• Book ID: 126594811
• Publisher: IEEE
• Year: 2012
• Weight: 291 KB
• Category: Article
• ISBN: 1467328472
• DOI: 10.1109/NVMTS.2013.6632853