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[IEEE 2012 12th Annual Non-Volatile Memory Technology Symposium (NVMTS) - Singapore, Singapore (2012.10.31-2012.11.2)] 2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings - Non-volatile data storage in HfO2-based ferroelectric FETs

✍ Scribed by Schroeder, U.; Yurchuk, E.; Mueller, S.; Mueller, J.; Slesazeck, S.; Schloesser, T.; Trentzsch, M.; Mikolajick, T.

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