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[IEEE 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) - Kuala Lumpur, Malaysia (2012.09.19-2012.09.21)] 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) - Calibration parameters in TCAD for predictive MOSFET device simulations

✍ Scribed by Ismail, Muhamad Amri; Bakar, Mohd Hezri Abu; Nasir, Iskhandar Md

Book ID: 120539392
Publisher: IEEE
Year: 2012
Weight: 836 KB
Category: Article
ISBN: 1467323942
DOI: 10.1109/SMElec.2012.6417137

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