[IEEE 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) - Kuala Lumpur, Malaysia (2012.09.19-2012.09.21)] 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) - Enhanced performance analysis of vertical strained-sigeimpact Ionization MOSFET (VESIMOS)

✍ Scribed by Saad, Ismail; Pogaku, Divya; Bakar, A R Abu; Zuhir, H. Mohd; Bolong, N.; Khairul, A. M.; Ghosh, Bablu; Ismail, Razali; Hashim, U.

• Book ID: 120067657
• Publisher: IEEE
• Year: 2012
• Weight: 897 KB
• Category: Article
• ISBN: 1467323942
• DOI: 10.1109/SMElec.2012.6417118