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[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - SiC MOSFET oxide-trap two-way tunneling model

✍ Scribed by Lelis, Aivars; Habersat, Dan; Green, Ron; Goldsman, Neil

Book ID: 121717574
Publisher: IEEE
Year: 2011
Weight: 187 KB
Category: Article
ISBN: 1457717557
DOI: 10.1109/isdrs.2011.6135139

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