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[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Investigation of a high temperature oxide-trap activation model for SiC power MOSFETs

✍ Scribed by Green, Ronald; Lelis, Aivars; Habersat, Daniel; El, Mooro

Book ID: 121708127
Publisher: IEEE
Year: 2011
Weight: 368 KB
Category: Article
ISBN: 1457717557
DOI: 10.1109/isdrs.2011.6135313

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