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[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Fabrication of segmented-channel MOSFETs for reduced short-channel effects

✍ Scribed by Ho, Byron; Sun, Xin; Xu, Nuo; Sako, Takuji; Maekawa, Kaoru; Tomoyasu, Masayuki; Akasaka, Yasushi; Liu, Tsu-Jae King

Book ID: 120179947
Publisher: IEEE
Year: 2011
Weight: 566 KB
Category: Article
ISBN: 1457717557
DOI: 10.1109/ISDRS.2011.6135280

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