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[IEEE 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Tianjin, China (2011.11.17-2011.11.18)] 2011 IEEE International Conference of Electron Devices and Solid-State Circuits - Impact of stress on band-to-band tunneling current in SOI MOSFET based on first-principles calculation

โœ Scribed by Li, Y. Z.; Zhang, L. J.; Wang, Z. O.; Chen, Z.; Li, Y. Q.; Lu, Z. H.; Mao, L. F.


Book ID
120823362
Publisher
IEEE
Year
2011
Weight
244 KB
Category
Article
ISBN
1457719967

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