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[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Fundamental origin of excellent low-noise property in 3D Si-MOSFETs ∼ Impact of charge-centroid in the channel due to quantum effect on 1/f noise ∼

✍ Scribed by Feng, W.; Hettiarachchi, R.; Lee, Y.; Sato, S.; Kakushima, K.; Sato, M.; Fukuda, K.; Niwa, M.; Yamabe, K.; Shiraishi, K.; Iwai, H.; Ohmori, K.

Book ID
125834828
Publisher
IEEE
Year
2011
Weight
980 KB
Category
Article
ISBN
1457705044

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