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[IEEE 2011 69th Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2011.06.20-2011.06.22)] 69th Device Research Conference - Effects of heavily doped source on the subthreshold characteristics of nanowire tunneling transistors

✍ Scribed by Khayer, M. Abul; Lake, Roger K.

No coin nor oath required. For personal study only.

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