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[IEEE 2010 IEEE International SOI Conference - San Diego, CA, USA (2010.10.11-2010.10.14)] 2010 IEEE International SOI Conference (SOI) - Comparing Single Event Upset sensitivity of bulk vs. SOI based FinFET SRAM cells using TCAD simulations

✍ Scribed by Ball, D.R.; Alles, M.L.; Schrimpf, R.D.; Cristoloveanu, S.

No coin nor oath required. For personal study only.

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