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[IEEE 2010 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC) - Hong Kong (2010.12.15-2010.12.17)] 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-

✍ Scribed by Xiao Zou, ; Xu, J P; Lai, P T; Yao Li, ; Feng Ji, ; Deng, L F

Book ID: 126600408
Publisher: IEEE
Year: 2010
Weight: 647 KB
Category: Article
ISBN: 1424499976
DOI: 10.1109/EDSSC.2010.5713770

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