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[IEEE 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Austin, TX, USA (2010.10.4-2010.10.6)] 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) - Vertical profile optimization for +400 GHz fMAX Si/SiGe:C HBTs

✍ Scribed by Lacave, T.; Chevalier, P.; Campidelli, Y.; Buczko, M.; Depoyan, L.; Berthier, L.; Avenier, G.; Gaquiere, C.; Chantre, A.

Book ID: 120066108
Publisher: IEEE
Year: 2010
Weight: 268 KB
Category: Article
ISBN: 1424485789
DOI: 10.1109/BIPOL.2010.5667965

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