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[IEEE 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - Takamatsu, Japan (2010.05.31-2010.06.4)] 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - Sub 50 nm InP HEMT with fT = 586 GHz and amplifier circuit gain at 390 GHz for sub-millimeter wave applications

✍ Scribed by Lai, R.; Mei, X. B.; Sarkozy, S.; Yoshida, W.; Liu, P. H.; Lee, J.; Lange, M.; Radisic, V.; Leong, K.; Deal, W.

Book ID: 121751541
Publisher: IEEE
Year: 2010
Weight: 429 KB
Category: Article
ISBN: 1424459192
DOI: 10.1109/ICIPRM.2010.5516002

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