𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - Takamatsu, Japan (2010.05.31-2010.06.4)] 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - Improvement in noise figure of wide-gate-head InP-based HEMTs with cavity structure

✍ Scribed by Takahashi, T.; Sato, M.; Nakasha, Y.; Hirose, T.; Hara, N.

Book ID: 118060418
Publisher: IEEE
Year: 2010
Weight: 66 KB
Volume: 0
Category: Article
ISBN: 1424459192
DOI: 10.1109/iciprm.2010.5516196

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 2010 22nd International Conference

[IEEE 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - Takamatsu, Japan (2010.05.31-2010.06.4)] 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - RTD oscillators at 430–460 GHz with high output power (~200 µW) using integrated offset slot antennas

✍ Suzuki, S.; Hinata, K.; Shiraishi, M.; Asada, M.; Sugiyama, H.; Yokoyama, H. 📂 Article 📅 2010 🏛 IEEE ⚖ 637 KB

[IEEE 2010 22nd International Conference

[IEEE 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - Takamatsu, Japan (2010.05.31-2010.06.4)] 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - High-electron-mobility In0.53Ga0.47As/In0.8Ga0.2As composite-channel modulation-doped structures grown by metal-organic vapor-phase epitaxy

✍ Sugiyama, Hiroki; Matsuzaki, Hideaki; Yokoyama, Haruki; Enoki, Takatomo 📂 Article 📅 2010 🏛 IEEE ⚖ 726 KB

[IEEE Related Materials (IPRM) - Versail

[IEEE Related Materials (IPRM) - Versailles, France (2008.05.25-2008.05.29)] 2008 20th International Conference on Indium Phosphide and Related Materials - Improvement in high frequency and noise characteristics of InP-based HEMTs by reducing parasitic capacitance

✍ Takahashi, T.; Makiyama, K.; Hara, N.; Sato, M.; Hirose, T. 📂 Article 📅 2008 🏛 IEEE ⚖ 216 KB