✦ LIBER ✦

[IEEE Related Materials (IPRM) - Versailles, France (2008.05.25-2008.05.29)] 2008 20th International Conference on Indium Phosphide and Related Materials - Improvement in high frequency and noise characteristics of InP-based HEMTs by reducing parasitic capacitance

✍ Scribed by Takahashi, T.; Makiyama, K.; Hara, N.; Sato, M.; Hirose, T.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE Related Materials (IPRM) - Versail

✍ Gonda, Shun-ichi 📂 Article 📅 2008 🏛 IEEE ⚖ 281 KB

[IEEE Related Materials (IPRM) - Versail

✍ Passlack, Matthias 📂 Article 📅 2008 🏛 IEEE ⚖ 120 KB

[IEEE Related Materials (IPRM) - Versail

✍ Passlack, Matthias 📂 Article 📅 2008 🏛 IEEE ⚖ 162 KB

[IEEE Related Materials (IPRM) - Versail

✍ Lamy, J. M.; Paranthoen, C.; Levallois, C.; Nakkar, A.; Folliot, H.; Dehaese, O. 📂 Article 📅 2008 🏛 IEEE ⚖ 403 KB

[IEEE Related Materials (IPRM) - Versail

✍ Lange, M. D.; Mei, X. B.; Chin, T. P.; Yoshida, W. H.; Deal, W. R.; Liu, P.-H.; 📂 Article 📅 2008 🏛 IEEE ⚖ 243 KB

[IEEE Related Materials (IPRM) - Versail

✍ Akis, R.; Faralli, N.; Ferry, D. K.; Goodnick, S.M.; Saraniti, M.; Ayubi-Moak, J 📂 Article 📅 2008 🏛 IEEE ⚖ 231 KB