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[IEEE 2010 21st Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC) - San Francisco, CA, USA (2010.07.11-2010.07.13)] 2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC) - Structural and dielectric characterization of atomic layer deposited HfO2 and TiO2 as promising gate oxides

✍ Scribed by Tao, Qian; Jursich, Gregory; Takoudis, Christos

Book ID: 121383012
Publisher: IEEE
Year: 2010
Weight: 475 KB
Category: Article
ISBN: 1424465176
DOI: 10.1109/ASMC.2010.5551410

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