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[IEEE 2010 10th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Atlanta, GA, USA (2010.09.6-2010.09.9)] Numerical Simulation of Optoelectronic Devices - Electron leakage effects on the efficiency droop in GaN-based light-emitting diodes

✍ Scribed by Piprek, Joachim; Zhan-Ming Li,

Book ID: 121485073
Publisher: IEEE
Year: 2010
Weight: 744 KB
Category: Article
ISBN: 1424470161
DOI: 10.1109/NUSOD.2010.5595651

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