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[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Hole-mobility enhancement in ultrathin strained Si0.5Ge0.5-on-insulator fabricated by Ge condensation technique

✍ Scribed by Yang, Haigui; Wang, Dong; Nakashima, Hiroshi

Book ID: 120068373
Publisher: IEEE
Year: 2010
Weight: 628 KB
Category: Article
ISBN: 1424457971
DOI: 10.1109/ICSICT.2010.5667472

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