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[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Characteristics and modeling of Si-nanowire FETs

✍ Scribed by Jeong, Yoon-Ha; Baek, Rock-Hyun; Lee, Sang-Hyun; Baek, Chang-Ki; Kim, Dae M.

Book ID: 120611322
Publisher: IEEE
Year: 2010
Weight: 620 KB
Category: Article
ISBN: 1424457971
DOI: 10.1109/ICSICT.2010.5667604

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