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[IEEE 2009 International Semiconductor Device Research Symposium (ISDRS 2009) - College Park, MD (2009.12.9-2009.12.11)] 2009 International Semiconductor Device Research Symposium - Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress

✍ Scribed by Hock-Chun Chin, ; Xiao Gong, ; Huaxin Guo, ; Qian Zhou, ; Shao-Ming Koh, ; Hock Koon Lee, ; Luping Shi, ; Yee-Chia Yeo,

Book ID: 121790745
Publisher: IEEE
Year: 2009
Weight: 245 KB
Category: Article
ISBN: 1424460301
DOI: 10.1109/ISDRS.2009.5378197

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