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[IEEE 2009 International Semiconductor Device Research Symposium (ISDRS 2009) - College Park, MD (2009.12.9-2009.12.11)] 2009 International Semiconductor Device Research Symposium - Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs

✍ Scribed by Sharbati, S.; Fathipour, M.

Book ID: 118269037
Publisher: IEEE
Year: 2009
Weight: 192 KB
Volume: 0
Category: Article
ISBN: 1424460301
DOI: 10.1109/isdrs.2009.5378321

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