✦ LIBER ✦

[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures

✍ Scribed by Luisier, Mathieu; Klimeck, Gerhard

No coin nor oath required. For personal study only.

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