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[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs

✍ Scribed by Serra, N.; Conzatti, F.; Esseni, D.; De Michielis, M.; Palestri, P.; Selmi, L.; Thomas, S.; Whall, T.E.; Parker, E.H.C.; Leadley, D.R.; Witters, L.; Hikavyy, A.; Hytch, M.J.; Houdellier, F.; Snoeck, E.; Wang, T.J.; Lee, W.C.; Vellianitis, G.; van Dal, M.J.H.; Duriez, B.; Doornbos, G.; Lander, R.J.P.

Book ID: 120176980
Publisher: IEEE
Year: 2009
Weight: 888 KB
Category: Article
ISBN: 1424456398
DOI: 10.1109/IEDM.2009.5424419

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