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[IEEE 2009 67th Annual Device Research Conference (DRC) - University Park, PA, USA (2009.06.22-2009.06.24)] 2009 Device Research Conference - Steep subthreshold slope nanowire FETs with gate-induced Schottky-barrier tunneling

✍ Scribed by Li, Qiliang; Zhu, Xiaoxiao; Ioannou, Dimitris; Suehle, John; Richter, Curt

No coin nor oath required. For personal study only.

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